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2SD1047 npn transistor complementary pnp replacement
The 2SD1047 transistor might have a current gain anywhere between 60 and 200 Sometimes the 2S prefix is not marked on the package the 2SD1047 transistor might be marked D1047 Complementary PNP transistor The complementary PNP transistor to the 2SD1047 is the 2SB817 Replacement and equivalent transistor for the 2SD1047

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High power NPN epitaxial planar bipolar transistor
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO 140 V Typical ft 20 MHz Fully characterized at 125 oC Application Power supply Description The device is a NPN transistor manufactured using new BiT LA Bipolar transistor for linear amplifier technology The resulting transistor

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2SD1047 Datasheet Equivalent Cross Reference Search
Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817 2SD1047 140V 12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one unit mm point fixing type plastic molded package Inter 2022A changeable with TO 3

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2SD1047 D npn transistor complementary pnp replacement
The 2SD1047 D transistor might have a current gain anywhere between 60 and 120 Marking Sometimes the 2S prefix is not marked on the package the 2SD1047 D transistor might be marked D1047 D Complementary PNP transistor The complementary PNP transistor to the 2SD1047 D

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2SD1047 High power NPN epitaxial planar bipolar
The device is a NPN transistor manufactured using new BiT LA Bipolar transistor for linear amplifier technology The resulting transistor shows good gain linearity behaviour

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